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? semiconductor components industries, llc, 2015 january, 2015 ? rev. 12 1 publication order number: mje18004/d mje18004, mjf18004 switch-mode npn bipolar power transistor for switching power supply applications the mje/mjf18004 have an applications specific state?of?the?art die designed for use in 220 v line?operated switch?mode power supplies and electronic light ballasts. features ? improved efficiency due to low base drive requirements: ? high and flat dc current gain h fe ? fast switching ? no coil required in base circuit for t urn?off (no current tail) ? full characterization at 125 c ? on semiconductor six sigma philosophy provides tight and reproducible parametric distributions ? two package choices: standard to?220 or isolated t o?220 ? mjf18004, case 221d, is ul recognized at 3500 v rms : file #e69369 ? these devices are pb?free and are rohs compliant* maximum ratings rating symbol value unit collector?emitter sustaining voltage v ceo 450 vdc collector?base breakdown voltage v ces 1000 vdc emitter?base voltage v ebo 9.0 vdc collector current ? continuous i c 5.0 adc collector current ? peak (note 1) i cm 10 adc base current ? continuous i b 2.0 adc base current ? peak (note 1) i bm 4.0 adc rms isolation voltage (note 2) test no. 1 per figure 22a test no. 2 per figure 22b test no. 3 per figure 22c (for 1 sec, r.h. < 30%, t a = 25 c) v isol mjf18004 4500 3500 1500 v total device dissipation @ t c = 25 c mje18004 mjf18004 derate above 25 c mje18004 mjf18004 p d 75 35 0.6 0.28 w w/ c operating and storage temperature t j , t stg ?65 to 150 c thermal characteristics characteristics symbol max unit thermal resistance, junction?to?case mje18004 mjf18004 r jc 1.65 3.55 c/w thermal resistance, junction?to?ambient r ja 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 5 seconds t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. pulse test: pulse width = 5 ms, duty cycle 10%. 2. proper strike and creepage distance must be provided. power transistor 5.0 amperes 1000 volts 35 and 75 watts www. onsemi.com marking diagrams g = pb?free package a = assembly location y = year ww = work week see detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. ordering information *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to?220ab case 221a?09 style 1 1 2 3 mje18004g ayww to?220 fullpack case 221d style 2 ul recognized 3 1 2 MJF18004G ayww 4 1 base 3 emitter collector 2,4
mje18004, mjf18004 www. onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise specified) characteristic symbol min typ max unit off characteristics collector?emitter sustaining voltage (i c = 100 ma, l = 25 mh) v ceo(sus) 450 ? ? vdc collector cutoff current (v ce = rated v ceo , i b = 0) i ceo ? ? 100 adc collector cutoff current (v ce = rated v ces , v eb = 0) (t c = 25 c) (t c = 125 c) collector cutoff current (v ce = 800 v, v eb = 0) (t c = 125 c) i ces ? ? ? ? ? ? 100 500 100 adc emitter cutoff current (v eb = 9.0 vdc, i c = 0) i ebo ? ? 100 adc ????????????????????????????????? ????????????????????????????????? on characteristics ???????????????????? ???????????????????? ???????????????????? base?emitter saturation voltage (i c = 1.0 adc, i b = 0.1 adc) base?emitter saturation voltage (i c = 2.0 adc, i b = 0.4 adc) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????????????? ???????????????? ???????????????? ???????????????? ???????????????? ????? ????? ????? ????? ????? c) (t c = 125 c) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ???????????????? ???????????????? ???????????????? ???????????????? ???????????????? ???????????????? ????? ????? ????? ????? ????? ????? c) (t c = 125 c) (t c = 125 c) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ???????????????????? ???????????????????? current gain bandwidth (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 mhz) ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? ???????????????????? ???????????????????? ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? ???????????????????? ???????????????????? ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? ????????? ????????? ????????? ????????? ????????? ????????? ????????? ????????? s and 3.0 s respectively after rising i b1 reaches 90% of final i b1 (see figure 18) ????? ????? ????? ????? ???? ???? ???? s ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??? ??? ???? ???? s ????? ????? c) ???? ???? ??? ??? ???? ???? ????? ????? ????? ????? ????? ???? ???? ???? s ????? ????? ????? c) ???? ???? ???? ??? ??? ??? ???? ???? ???? ???? ???? ???? s ????? ????? ????? c) ???? ???? ???? ??? ??? ??? ???? ???? ????
mje18004, mjf18004 www. onsemi.com 3 ????????????????????????????????? ????????????????????????????????? ????????????????????????????????? ? continued (t c = 25 c unless otherwise specified) ???????????????????? ???????????????????? characteristic ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? (d.c. 10%, pulse width = 20 s) ???????? ???????? ???????? ????????? ????????? ????????? ????????? ????????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????? ???????? ???????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? s ???????? ???????? ????????? ????????? ????????? ????????? ????? ????? c) ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? ???????? ???????? ???????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? s ???????? ???????? ???????? ????????? ????????? ????????? ????????? ????????? ????????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????? ???????? ????? ????? c) ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? s ???????? ???????? ???????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 h) ???????? ???????? ???????? ????????? ????????? ????????? ????????? ????????? ????????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????? ???????? ????? ????? c) ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? s ???????? ???????? ???????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????? ???????? ???????? ????????? ????????? ????????? ????????? ????????? ????????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????? ???????? ????? ????? c) ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? s ???????? ???????? ???????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????? ???????? ???????? ????????? ????????? ????????? ????????? ????????? ????????? 5.0 vdc) ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????? ???????? ????? ????? c) ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? s ???????? ???????? ???????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ???
mje18004, mjf18004 www. onsemi.com 4 h fe , dc current gain i c , collector current (amps) 0.01 100 i c , collector current (amps) figure 1. dc current gain @ 1 volt h fe , dc current gain figure 2. dc current gain @ 5 volts v ce , voltage (volts) figure 3. collector saturation region figure 4. collector?emitter saturation voltage figure 5. base?emitter saturation region figure 6. capacitance 10 1 1.00 10.00 100 10 1 0.01 0.10 1.00 10.00 2.0 0.01 i b , base current (amps) 10.00 1.00 0.01 0.01 i c, collector current (amps) 0.10 1.1 1.0 0.8 0.4 0.01 i c , collector current (amps) 0.10 1.00 10.00 1000 100 1 v ce , collector-emitter voltage (volts) 1 100 1.0 0 0.10 1.00 10.00 10000 10 0.10 0.10 1.00 10.00 10 v ce , voltage (volts) v be , voltage (volts) 0.9 0.6 0.5 0.5 1.5 0.7 c, capacitance (pf) typical static characteristics v ce = 1 v t j = 125 c t j = 25 c t j = -20 c v ce = 5 v t j = 125 c t j = -20 c t j = 25 c t j = 25 c i c = 0.5 a 1 a 1.5 a 2 a 3 a 4 a t j = 25 c t j = 125 c i c /i b = 10 i c /i b = 5 t j = 25 c t j = 125 c i c /i b = 10 i c /i b = 5 c ib c ob t j = 25 c f = 1 mhz
mje18004, mjf18004 www. onsemi.com 5 figure 7. resistive switching, t on figure 8. resistive switching, t off i c , collector current (amps) i c collector current (amps) i c , collector current (amps) 0 1800 i c , collector current (amps) t, time (ns) figure 9. inductive storage time, t si figure 10. inductive storage time, t si (h fe ) figure 11. inductive switching, t c and t fi , i c /i b = 5 figure 12. inductive switching, t c and t fi , i c /i b = 10 1000 4 2000 0 3500 3 h fe , forced gain 6 300 50 0 i c , collector current (amps) 45 150 0 2000 0 12 15 250 100 2 25 t si , storage time (ns) 200 150 100 400 4 2 500 1000 1500 2500 t, time (ns) t, time (ns) 034 1000 1500 2500 9 3500 500 1000 1500 2000 2500 023 t, time (ns) 45 023 t, time (ns) 1350 35 500 3000 4 5 7 8 10 11 13 14 250 50 3000 1 1 11 3000 200 600 800 1200 1400 1600 0 200 typical switching characteristics (i b2 = i c /2 for all switching) i b(off) = i c /2 v cc = 300 v pw = 20 s i c /i b = 10 i c /i b = 5 i c /i b = 5 i c /i b = 10 t j = 25 c t j = 125 c i b(off) = i c /2 v cc = 300 v pw = 20 s i c /i b = 5 i c /i b = 10 t j = 25 c t j = 125 c t j = 25 c t j = 125 c v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 h t j = 25 c t j = 125 c v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 h i c = 2 a i c = 1 a t j = 25 c t j = 125 c v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 h t fi t c t j = 25 c t j = 125 c v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 h t c t fi
mje18004, mjf18004 www. onsemi.com 6 0.1 figure 13. inductive fall time figure 14. inductive crossover time figure 15. forward bias safe operating area power derating factor figure 16. reverse bias safe operating area figure 17. forward bias power derating there are two limitations on the power handling ability of a tran - sistor: average junction temperature and second breakdown. saf e operating area curves indicate i c ?v ce limits of the transistor tha t must be observed for reliable operation; i.e., the transistor must no t be subjected to greater dissipation than the curves indicate. the dat a of figure 15 is based on t c = 25 c; t j (pk) is variable depending on power level. second breakdown pulse limits are valid for duty cy - cles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowabl e current at the voltages shown on figure 15 may be found at any cas e temperature by using the appropriate curve on figure 17. t j (pk) ma y be calculated from the data in figures 20 and 21. at any case temper - atures, thermal limitations will reduce the power that can be handled to values less the limitations imposed by second breakdown. for in - ductive loads, high voltage and current must be sustained simultane - ously during turn?off with the base?to?emitter junction reverse bi - ased. the safe level is specified as a reverse?biased safe operating area (figure 16). this rating is verified under clamped conditions s o that the device is never subjected to an avalanche mode. h fe , forced gain h fe , forced gain t fi , fall time (ns) t c , crossover time (ns) i c , collector current (amps) i c , collector current (amps) v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) t c , case temperature ( c) guaranteed safe operating area information 3 6 12 15 9 70 4 5 7 8 10 11 13 14 3 6 12 15 50 4 5 13 14 10 1000 100 0.01 400 600 110 0 900 0 500 800 700 1000 80 90 100 110 120 130 140 150 160 200 300 150 100 250 1.0 10 100 1.0 2.0 3.0 4.0 5.0 6.0 9 78 1011 typical switching characteristics (i b2 = i c /2 for all switching) 1.0 0.8 0.6 0.4 0.2 0 160 140 120 100 80 60 40 20 i c = 2 a i c = 1 a t j = 25 c t j = 125 c v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 h v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 h i c = 1 a i c = 2 a t j = 25 c t j = 125 c 1 s 10 s 50 s 1ms 5ms dc (mje18004) dc (mjf18004) extended soa t c 125 c i c /i b 4 l c = 500 h v be(off) = 0 v -1.5 v -5 v second breakdown derating thermal derating
mje18004, mjf18004 www. onsemi.com 7 -5 -4 -3 -2 -1 0 1 2 3 4 5 012345678 figure 18. dynamic saturation voltage measurements time v ce volts i b figure 19. inductive switching measurements 1 s 3 s 90% i b dyn 1 s dyn 3 s 10 9 8 7 6 5 4 3 2 1 0 012 34567 8 time i b i c t si v clamp 10% v clamp 90% i b 1 10% i c t c 90% i c t fi table 1. inductive load switching drive circuit +15 v 1 f 150 3 w 100 3 w mpf930 +10 v 50 common -v off 500 f mpf930 mtp8p10 mur105 mje210 mtp12n10 mtp8p10 150 3 w 100 f i out a 1 f i c peak v ce peak v ce i b i b 1 i b 2 v(br)ceo(sus) l = 10 mh rb2 = v cc = 20 volts i c (pk) = 100 ma inductive switching l = 200 h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 rbsoa l = 500 h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 r b2 r b1
mje18004, mjf18004 www. onsemi.com 8 r jc (t) = r(t) r jc r jc = 3.12 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 r jc (t) = r(t) r jc r jc = 1.25 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 t, time (ms) figure 20. typical thermal response (z jc(t) ) for mje18004 r(t), transient thermal resistance (normalized) 0.2 d = 0.5 single pulse 0.01 0.10 1.00 10.00 100.00 100000 0.10 1.00 0.01 t, time (ms) figure 21. typical thermal response for mjf18004 r(t), transient thermal resistance (normalized) 0.2 0.1 0.01 0.10 1.00 10.00 100.00 1000 0.10 1.00 0.02 0.05 1000 10000 0.1 0.05 0.02 single pulse d = 0.5 typical thermal response ordering information device package shipping mje18004g to?220ab (pb?free) 50 units / rail MJF18004G to?220 (fullpack) (pb?free) 50 units / rail
mje18004, mjf18004 www. onsemi.com 9 mounted fully isolated package leads heatsink 0.110 min figure 22a. screw or clip mounting position for isolation test number 1 *measurement made between leads and heatsink with all leads shorted together clip mounted fully isolated package leads heatsink clip 0.099 min mounted fully isolated package leads heatsink 0.099 min figure 22b. clip mounting position for isolation test number 2 figure 22c. screw mounting position for isolation test number 3 test conditions for isolation tests* 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is suf ficient to provide maximum power dissipation capability. the compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 4?40 screw, without washers, and applying a torque in excess of 20 i n . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 4?40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not recom- mend exceeding 10 in . lbs of mounting torque under any mounting conditions. figure 23. typical mounting techniques for isolated package figure 23a. screw?mounted figure 23b. clip?mounted mounting information** ** for more information about mounting power semiconductors see application note an1040.
mje18004, mjf18004 www. onsemi.com 10 package dimensions to?220 case 221a?09 issue ah style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j
mje18004, mjf18004 www. onsemi.com 11 package dimensions to?220 fullpak case 221d?03 issue k dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 seating plane ?t? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. ?b? ?y? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y style 2: pin 1. base 2. collector 3. emitter on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mje18004/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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